Well-designed Silicon Carbide Grinding - F10-F220 Polishing and Grinding Black Silicon Carbide Grit – Xinli

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Well-designed Silicon Carbide Grinding - F10-F220 Polishing and Grinding Black Silicon Carbide Grit – Xinli Detail:

Black Silicon Carbide Introduction

Because of the rarity of natural moissanite, most silicon carbide is synthetic. It is used as an abrasive, and more recently as a semiconductor and diamond simulant of gem quality. The simplest manufacturing process is to combine silica sand and carbon in an Acheson graphite electric resistance furnace at a high temperature, between 1,600 °C (2,910 °F) and 2,500 °C (4,530 °F). Fine SiO2 particles in plant material (e.g. rice husks) can be converted to SiC by heating in the excess carbon from the organic material. The silica fume, which is a byproduct of producing silicon metal and ferrosilicon alloys, also can be converted to SiC by heating with graphite at 1,500 °C (2,730 °F).

black silicon

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We goal to understand excellent disfigurement from the manufacturing and supply whole heartedly support to domestic and abroad clients wholeheartedly for Well-designed Silicon Carbide Grinding - F10-F220 Polishing and Grinding Black Silicon Carbide Grit – Xinli , The product will supply to all over the world, such as: Moscow, Italy, Moldova, Due to good quality and reasonable prices, our products have been exported to more than 10 countries and regions. We are looking forward to cooperating with all customers from at home and abroad. Moreover, customer satisfaction is our eternal pursuit.